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| ( DataSheet : www..com ) BSM 200 GA 120 DN2 IGBT Power Module * Single switch * Including fast free-wheeling diodes * Package with insulated metal base plate Type BSM 200 GA 120 DN2 BSM 200 GA 120 DN2 S Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage RGE = 20 k Gate-emitter voltage DC collector current TC = 25 C TC = 80 C VCE IC Package SINGLE SWITCH 1 SSW SENSE 1 Ordering Code C67076-A2006-A70 C67070-A2006-A70 1200V 300A 1200V 300A Symbol VCE VCGR Values 1200 1200 Unit V VGE IC 20 A 300 200 Pulsed collector current, tp = 1 ms TC = 25 C TC = 80 C Power dissipation per IGBT TC = 25 C Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltage, t = 1min. Creepage distance Clearance DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 ICpuls 600 400 Ptot 1550 Tj Tstg RthJC RthJCD Vis + 150 -40 ... + 125 0.08 0.15 2500 20 11 F 40 / 125 / 56 sec Vac mm K/W C W 1 Oct-27-1997 www..com BSM 200 GA 120 DN2 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage VGE = VCE, IC = 8 mA Collector-emitter saturation voltage VGE = 15 V, IC = 200 A, Tj = 25 C VGE = 15 V, IC = 200 A, Tj = 125 C Zero gate voltage collector current VCE = 1200 V, VGE = 0 V, Tj = 25 C VCE = 1200 V, VGE = 0 V, Tj = 125 C Gate-emitter leakage current VGE = 20 V, VCE = 0 V AC Characteristics Transconductance VCE = 20 V, IC = 200 A Input capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz Crss 1 Coss 2 Ciss 13 gfs 108 nF S IGES 200 ICES 3 12 4 nA VCE(sat) 2.5 3.1 3 3.7 mA VGE(th) 4.5 5.5 6.5 V Values typ. max. Unit 2 Oct-27-1997 BSM 200 GA 120 DN2 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Switching Characteristics, Inductive Load at Tj = 125 C Turn-on delay time VCC = 600 V, VGE = 15 V, IC = 200 A RGon = 4.7 Rise time VCC = 600 V, VGE = 15 V, IC = 200 A RGon = 4.7 Turn-off delay time VCC = 600 V, VGE = -15 V, IC = 200 A RGoff = 4.7 Fall time VCC = 600 V, VGE = -15 V, IC = 200 A RGoff = 4.7 Free-Wheel Diode Diode forward voltage IF = 200 A, VGE = 0 V, Tj = 25 C IF = 200 A, VGE = 0 V, Tj = 125 C Reverse recovery time IF = 200 A, VR = -600 V, VGE = 0 V diF/dt = -2000 A/s, Tj = 125 C Reverse recovery charge IF = 200 A, VR = -600 V, VGE = 0 V diF/dt = -2000 A/s Tj = 25 C Tj = 125 C 12 36 Qrr 0.5 C trr VF 2.3 1.8 2.8 s V 80 120 tf 550 800 td(off) 80 160 tr 110 220 td(on) ns Values typ. max. Unit 3 Oct-27-1997 BSM 200 GA 120 DN2 Power dissipation Ptot = (TC) parameter: Tj 150 C 1600 Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C 10 3 t = 21.0s p W Ptot IC A 1200 100 s 10 2 1000 800 1 ms 600 10 1 10 ms 400 200 0 0 20 40 60 80 100 120 C 160 10 0 0 10 DC 3 10 10 1 10 2 V TC VCE Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C 320 Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 0 K/W IGBT A IC ZthJC 10 -1 240 200 10 -2 160 10 120 -3 D = 0.50 0.20 0.10 0.05 single pulse 10 -4 80 0.02 0.01 40 0 0 10 -5 -5 10 20 40 60 80 100 120 C 160 10 -4 10 -3 10 -2 10 -1 s 10 0 TC tp 4 Oct-27-1997 BSM 200 GA 120 DN2 Typ. output characteristics IC = f (VCE) parameter: tp = 80 s, Tj = 25 C 400 Typ. output characteristics IC = f (VCE) parameter: tp = 80 s, Tj = 125 C 400 A IC 300 17V 15V 13V 11V 9V 7V A IC 300 17V 15V 13V 11V 9V 7V 250 250 200 200 150 150 100 100 50 0 0 1 2 3 V VCE 5 50 0 0 1 2 3 V VCE 5 Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 s, VCE = 20 V 400 A IC 300 250 200 150 100 50 0 0 2 4 6 8 10 V 14 VGE 5 Oct-27-1997 BSM 200 GA 120 DN2 Typ. gate charge VGE = (QGate) parameter: IC puls = 200 A 20 V Typ. capacitances C = f (VCE) parameter: VGE = 0 V, f = 1 MHz 10 2 nF VGE 16 14 12 10 8 10 0 6 4 2 0 0 200 400 600 800 1000 nC 1400 10 -1 0 Coss Crss 600 V 800 V C Ciss 10 1 5 10 15 20 25 30 QGate V VCE 40 Reverse biased safe operating area ICpuls = f(VCE) , Tj = 150C parameter: VGE = 15 V, tp 1 ms, L < 20 nH 2.5 Short circuit safe operating area ICsc = f(VCE) , Tj = 150C parameter: VGE = 15 V, tSC 10 s, L < 20 nH 12 ICpulsIC di/dt = 1000A/s 3000A/s 5000A/s 1.5 ICsc/IC di/dt = 1000A/s 3000A/s 5000A/s 8 6 1.0 4 0.5 allowed number of short circuit: <1000 time between short 2 circuit: >1s 0.0 0 200 400 600 800 1000 1200 V 1600 VCE 0 0 200 400 600 800 1000 1200 V 1600 VCE 6 Oct-27-1997 BSM 200 GA 120 DN2 Typ. switching time I = f (IC) , inductive load , Tj = 125C par.: VCE = 600 V, VGE = 15 V, RG = 4.7 10 4 Typ. switching time t = f (RG) , inductive load , Tj = 125C par.: VCE = 600 V, VGE = 15 V, IC = 200 A 10 4 ns t 10 3 tdoff t ns tdoff 10 3 tdon tr tdon tr tf 10 2 10 2 tf 10 1 0 100 200 300 A IC 500 10 1 0 10 20 30 40 60 RG Typ. switching losses E = f (IC) , inductive load , Tj = 125C par.: VCE = 600 V, VGE = 15 V, RG = 4.7 100 mWs E 80 70 60 50 40 30 20 10 0 0 Eoff Eon Typ. switching losses E = f (RG) , inductive load , Tj = 125C par.: VCE = 600V, VGE = 15 V, IC = 200 A 100 Eon mWs E 80 70 60 50 40 30 20 10 0 0 Eoff 100 200 300 A IC 500 10 20 30 40 60 RG 7 Oct-27-1997 BSM 200 GA 120 DN2 Forward characteristics of fast recovery reverse diode IF = f(VF) parameter: Tj 400 Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 0 Diode A IF 300 ZthJC K/W 10 -1 250 Tj=125C 200 Tj=25C 10 -2 D = 0.50 0.20 150 10 -3 0.10 0.05 0.02 0.01 50 0 0.0 0.5 1.0 1.5 2.0 V VF 3.0 10 -4 -5 10 single pulse 100 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 8 Oct-27-1997 BSM 200 GA 120 DN2 Circuit Diagram Package Outlines Dimensions in mm Weight: 420 g 9 Oct-27-1997 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM200GA120DN2 Anhang C-Serie Appendix C-series Gehause spezifische Werte Housing specific values Modulinduktivitat stray inductance module LsCE typ. 20 nH Gehausemae C-Serie Package outline C-series Appendix C-series Appendix_C-Serie_BSM200GA120DN2.xls 2001-09-20 |
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